Development of Quantum Simulator for Emerging Nanoelectronics Devices

<table>Typical <svg height="14.2375" id="M139" style="vertical-align:-3.13504pt" version="1.1" viewbox="0 0 17.049999 14.2375" width="17.049999" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,14.2375)">
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<text transform="matrix(1,0,0,-1,-71.95,63.79)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝐼</tspan>
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<text transform="matrix(1,0,0,-1,-65.95,60.66)">
<tspan style="font-size: 8.75px; " x="0" y="0">𝐷</tspan>
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</svg>-<svg height="14.2375" id="M140" style="vertical-align:-3.13504pt" version="1.1" viewbox="0 0 18.5375 14.2375" width="18.5375" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,14.2375)">
<g transform="translate(72,-60.61)">
<text transform="matrix(1,0,0,-1,-71.95,63.79)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝑉</tspan>
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<text transform="matrix(1,0,0,-1,-64.76,60.66)">
<tspan style="font-size: 8.75px; " x="0" y="0">𝐷</tspan>
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</svg> characteristics of spin FET simulated by the simulator NEMO-VN2 for various values of <svg height="16.2875" id="M141" style="vertical-align:-4.77652pt" version="1.1" viewbox="0 0 15.55 16.2875" width="15.55" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,16.2875)">
<g transform="translate(72,-58.97)">
<text transform="matrix(1,0,0,-1,-71.95,63.79)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝑉</tspan>
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<text transform="matrix(1,0,0,-1,-64.76,60.66)">
<tspan style="font-size: 8.75px; " x="0" y="0">𝑔</tspan>
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</svg> = 0.1 V, 0.2 V and 0.3 V at room temperature, <svg height="10.325" id="M142" style="vertical-align:-0.0pt" version="1.1" viewbox="0 0 11.225 10.325" width="11.225" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,10.325)">
<g transform="translate(72,-63.74)">
<text transform="matrix(1,0,0,-1,-71.95,63.79)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝑇</tspan>
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</svg> = 300 K. The spin FET device parameters are material, GaAs, <svg height="14.375" id="M143" style="vertical-align:-3.24037pt" version="1.1" viewbox="0 0 20.0625 14.375" width="20.0625" xmlns="http://www.w3.org/2000/svg">
<g transform="matrix(1.25,0,0,-1.25,0,14.375)">
<g transform="translate(72,-60.5)">
<text transform="matrix(1,0,0,-1,-71.95,63.79)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝐿</tspan>
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<text transform="matrix(1,0,0,-1,-63.1,60.66)">
<tspan style="font-size: 8.75px; " x="0" y="0">𝐺</tspan>
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</g>
</svg> = 20 nm, and the gate thickness is 1 nm. </table>

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fig14

Figure 14

Figure 14: Development of Quantum Simulator for Emerging Nanoelectronics Devices 