Development of Quantum Simulator for Emerging Nanoelectronics Devices
Figure 15
- characteristics simulated by the simulator, NEMO-VN2 at room temperature, = 300 K for various values of = 0.2 V; 0.3 V; 0.4 V; 0.5 V. The parameters of spin FET are material, GaAs, and the gate length, of 20 nm, and the gate thickness of 1 nm.
