Figure 15: 𝐼 𝐷 - 𝑉 𝐷 characteristics simulated by the simulator, NEMO-VN2 at room temperature, 𝑇 = 300 K for various values of 𝑉 𝐷 = 0.2 V; 0.3 V; 0.4 V; 0.5 V. The parameters of spin FET are material, GaAs, and the gate length, 𝐿 𝐺 of 20 nm, and the gate thickness of 1 nm.