Development of Quantum Simulator for Emerging Nanoelectronics Devices

Figure 6

𝐼_𝐷-𝑉_𝐷 characteristics simulated by the simulator at room temperature for various values of 𝑉_𝐺 = 0 mV and 𝑉_𝐺 = e/2𝐶_𝐺. The SET device parameters are 𝐿 = 10 nm, 𝐶_𝐺 = 𝐶_𝑆 = 𝐶_𝐷 = 1 aF, and 𝑅_𝑆 = 𝑅_𝐷 = 1 MΩ.