Figure 8: 𝐼 𝐷 𝑆 - 𝑉 𝐷 𝑆 characteristics of (a) planar and (b) coaxial CNTFETs having the length of 20 nm under ballistic transport (red colour), with scattering (green colour) at various gate biases in the range from 0.4 to 0.7 V in the step of 0.1 V. The bottom and top curves are at the gate voltages of 0.4 V and 0.7 V, respectively.