Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide
Figure 2
Example of y-scan (parallel to SiC/C interface and perpendicular to structure edge) measured for nsc1_1. Position corresponds to the edge of the structure, —to laser beam focused on the area covered with sequence of layers, —to laser beam focused outside of the structure. Panel (a) presents measured spectra as 3D-surface, panel (b)—corresponding map, and panel (c)—example of Raman spectrum and color scale.
