International Scholarly Research Notices / 2012 / Article / Fig 5

Research Article

Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide

Figure 5

Comparison of normalized Raman spectra measured for different samples—(a) nsc1_1, (b) nsc1_3, and (c) nsc1_2 with UV excitation ( ). In the case of each sample spectra were measured at different position with respect to the edge of the structure: outside of the structure (blue line), on the edge (green line), on the structure near the edge (red line), and on the structure far from the edge (black line). Arrows in panels (a) and (b) mark the maximum of observed carbon band. In the case of panel (c) arrow marks the position of band expected for nanocrystalline graphite.

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