Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide
Figure 7
Analysis of Raman spectra in the range corresponding to 2D band () measured with visible excitation (488 nm)—panel (a) nsc1_1, panel (b) nsc1_3. The main plot in each panel presents measured data (red points) and fitted Lorentzian component (black line). The maxima of Lorentzian components are given in the plot. The component reproducing the “hole” in the band is shifted up to the level equal to 1. Upper inset compares measured data (red points) with fitted function (black line). Lower inset presents autocorrelation function as a certificate of quality of fitting procedure. In the case of nsc1_2 the signal corresponding to 2D band was negligible and due to unfavorable signal-to-noise ratio was not analyzed.
