Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide
Figure 8
Analysis of Raman spectra in the range of Raman shift measured with ultraviolet excitation (244 nm)—panel (a) nsc1_1, panel (b) nsc1_3. The main plot in each panel presents measured data (red points) and fitted Lorentzian components (black line). The maxima of Lorentzian fitting components are given in the plot. Upper inset compares measured data (red points) with fitted function (black line). Lower inset presents autocorrelation function as a certificate of quality of fitting procedure. The signal recorded for nsc1_2 sample has to small intensity to be analyzed.
