Research Article
Visible and Deep-Ultraviolet Raman Spectroscopy as a Tool for Investigation of Structural Changes and Redistribution of Carbon in Ni-Based Ohmic Contacts on Silicon Carbide
Table 2
Positions of maxima and FWHM’s (in cm−1) of profiles obtained from fitted Lorentzian components. In brackets there are historical signs of carbon bands. In the case of nsc1_2 it was impossible to split G band into components, so the maximum and FWHM are given for . The data of the profile used to model the hole in nsc1_3 were omitted because this profile is not discussed in the paper.
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