Table of Contents
ISRN Electronics
Volume 2012, Article ID 891480, 7 pages
http://dx.doi.org/10.5402/2012/891480
Research Article

Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance

1Department of Electrical Engineering, Henry Samueli School of Engineering and Applied Science, University of California, Los Angeles, Los Angeles, CA 90095-7065, USA
2Department of Materials Science and Engineering, Henry Samueli School of Engineering and Applied Science, University of California, Los Angeles, Los Angeles, CA 90095-7065, USA

Received 23 July 2012; Accepted 9 August 2012

Academic Editors: L. Belostotski, J. Solsona, and E. Tlelo-Cuautle

Copyright © 2012 Yanjie Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Yanjie Wang, Bo-Chao Huang, Ming Zhang, Congqin Miao, Ya-Hong Xie, and Jason C. S. Woo, “Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance,” ISRN Electronics, vol. 2012, Article ID 891480, 7 pages, 2012. https://doi.org/10.5402/2012/891480.