Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance

<table>Measured transfer curves of 1.5 <i>μ</i>m gate-length graphene FETs at <svg height="14.6" id="M19" style="vertical-align:-3.13504pt" version="1.1" viewbox="0 0 65.275002 14.6" width="65.275002" xmlns="http://www.w3.org/2000/svg">
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<text transform="matrix(1,0,0,-1,-71.95,63.5)">
<tspan style="font-size: 12.50px; " x="0" y="0">𝑉</tspan>
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</svg> V.</table>

International Scholarly Research Notices

fig6

Figure 6

Figure 6: Fabrication of Self-Aligned Graphene FETs with Low Fringing Capacitance and Series Resistance 