International Scholarly Research Notices / 2012 / Article / Fig 3

Research Article

Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

Figure 3

AFM image of with a resistivity of 100 Ohm cm after 10 minutes etching in solution—H2O2/H2O/HF = 25/80/40. Ag particles were deposited before etching in solution 0.23 M HF and 5 × 10−5 M AgNO3 within 15 min.
958412.fig.003