International Scholarly Research Notices / 2012 / Article / Fig 4

Research Article

Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

Figure 4

AFM image of with a resistivity of 100 Ohm cm after 15 minutes etching in solution—H2O2/H2O/HF = 15/80/40. Ag particles were deposited before etching in solution 0.23 M HF and 10−3 M AgNO3 within 15 min.
958412.fig.004