Table of Contents
ISRN Condensed Matter Physics
Volume 2013 (2013), Article ID 140230, 6 pages
Research Article

Growth of Polycrystalline In2S3 Thin Films by Chemical Bath Deposition Using Acetic Acid as a Complexing Agent for Solar Cell Application

Department of Physics, Sri Venkateswara University, Tirupati 517 502, India

Received 28 June 2013; Accepted 10 August 2013

Academic Editors: J. Jeffries and M. Naito

Copyright © 2013 G. R. Gopinath and K. T. Ramakrishna Reddy. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In2S3 films have been successfully deposited on Corning glass substrates via chemical bath deposition (CBD) method using acetic acid as a novel complexing agent. The layers were grown by employing synthesis using indium sulphate and thioacetamide (TA) as precursors by varying TA concentration in the range of 0.1–0.5 M, keeping other deposition parameters constant. Energy dispersive X-ray analysis (EDAX) revealed an increase of S/In ratio in the films with the increase of TA concentration in the solution. The X-ray diffraction (XRD) analysis indicated a change in preferred orientation from (311) plane related to cubic structure to the (103) direction corresponding to the tetragonal crystal structure. The evaluated crystallite size varied in the range of 15–25 nm with the increase of TA concentration. Morphological analysis showed that the granular structure and the granular density decrease with the raise of TA concentration. The optical properties of the layers were also investigated using UV-Vis-NIR analysis, which indicated that all the In2S3 films had the optical transmittance >60% in the visible region, and the evaluated energy band varied in the range of 2.87–3.32 eV with the change of TA concentration. Further, a thin film heterojunction solar cell was fabricated using a novel absorber layer, SnS, with In2S3 as a buffer. The unoptimized SnS/In2S3/ZnO:Al solar cell showed a conversion efficiency of 0.6%.