International Scholarly Research Notices / 2013 / Article / Fig 1

Research Article

Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC

Figure 1

Current-voltage characteristics of as-deposited and annealed up to 1000°C 4H-n-SiC/C/Ni/Si/Ni/Si contacts. Inset: microscope image of the c-TLM pattern.
271658.fig.001

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