Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC

<table>Current-voltage characteristics of as-deposited and annealed up to 1000°C 4H-n-SiC/C/Ni/Si/Ni/Si contacts. Inset: microscope image of the c-TLM pattern.</table>

International Scholarly Research Notices

fig1

Figure 1

Figure 1: Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC 