International Scholarly Research Notices / 2013 / Article / Fig 3

Research Article

Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC

Figure 3

TEM cross-section and SEM images of 4H-n-SiC/C/Ni/Si/Ni/Si contacts: ((a), (b), (c)) as-deposited; ((d), (e)) annealed at 600°C for 15 min.; ((f), (g)) annealed at 1000°C for 10 min.
271658.fig.003a
(a)
271658.fig.003b
(b)
271658.fig.003c
(c)
271658.fig.003d
(d)
271658.fig.003e
(e)
271658.fig.003f
(f)
271658.fig.003g
(g)

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