International Scholarly Research Notices / 2013 / Article / Fig 4

Research Article

Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC

Figure 4

Raman spectra of 4H-n-SiC/C/Ni/Si/Ni/Si ohmic contacts formed after annealing at 800°C, 950°C, and 1000°C for 10 min.

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