Structure of Carbonic Layer in Ohmic Contacts: Comparison of Silicon Carbide/Carbon and Carbon/Silicide Interfaces
Figure 1
Analysis of Raman spectra measured for different samples with excitation through silicide layer ( nm). (a) presents the data obtained for nsc1_2, (b) for nsc1_3, and (c) for nsc1_1. The main plot in each panel shows experimental points together with fitted Gaussian profiles. The maxima positions are given in the plot. Upper inset compares experimental points with fitted function, and the lower inset shows the quality of fitting procedure by means of autocorrelation function.
