Table of Contents
ISRN Electronics
Volume 2013 (2013), Article ID 528094, 5 pages
http://dx.doi.org/10.1155/2013/528094
Research Article

Optimum Barrier Height for SiC Schottky Barrier Diode

IEEE Alexandria University, Alexandria 21913, Egypt

Received 4 April 2013; Accepted 13 June 2013

Academic Editors: H. L. Hartnagel, M. Liao, and L.-F. Mao

Copyright © 2013 Alaa El-Din Sayed Hafez and Mohamed Abd El-Latif. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Alaa El-Din Sayed Hafez and Mohamed Abd El-Latif, “Optimum Barrier Height for SiC Schottky Barrier Diode,” ISRN Electronics, vol. 2013, Article ID 528094, 5 pages, 2013. doi:10.1155/2013/528094