Texture of GaAs Nanoparticles Deposited by Pulsed Laser Ablation in Different Atmospheres
Figure 7
GISAXS intensity pattern for Ar and He assisted PLD (1000 pulses) of GaAs left and right, respectively. The working gas pressure is increasing from top to bottom, that is, (a) 0.01 mbar, (b) 0.1 mbar, (c) 1 mbar, and (d) 10 mbar. The left side of each of the images represents the measured intensity, while the right side is the result of a numerical fit.
