Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy

Figure 1

Scheme of the IBIC setup. A MeV ion beam from an accelerator is focused by a quadrupole lens system and scanned over the sample surface using two sets of magnetic or electrostatic plates. The insets on the right sides show the two irradiation geometries: from the top (frontal IBIC) and from the side (lateral IBIC) of the device under analysis. Each incident ion generates a measurable charge pulse, which is amplified and processed by a standard charge sensitive electronic chain. The data acquisition system acquires and stores every event along with the coordinates of the ion.