Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy

Figure 2

Top: schematics of the experimental set-up. Charge collection efficiency profiles from lateral IBIC experiments on p+-n-n+ silicon diode without (a, d) and with (b, c) Au contamination. (a, b) Lin-lin scale at fixed bias voltage; (d, c) Lin-log scale at different bias voltages. For details, see [41]. 𝐿_𝑝 = Hole diffusion length, 𝜏 = Hole lifetime.