Review Article

Semiconductor Characterization by Scanning Ion Beam Induced Charge (IBIC) Microscopy

Figure 7

Top: lateral IBIC maps relevant to different bias voltages: Schottky contact is on the left side; ohmic contact on the right side. (a) CCE profiles at different bias voltages. (b) Plot of the extension of the depletion region as evaluated from the IBIC maps as a function of applied bias voltage. Reprinted from [83] with permission from John Wiley and Sons.
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