Table of Contents
ISRN Condensed Matter Physics
Volume 2013, Article ID 654752, 6 pages
Research Article

Electron Transport Characteristics of Wurtzite GaN

Department of Physics, Faculty of Girls, Ain Shams University, Heliopolis, Cairo 11757, Egypt

Received 18 June 2013; Accepted 16 July 2013

Academic Editors: Y. Ohta, R. Rossmanith, and S. Wang

Copyright © 2013 F. M. Abou El-Ela and A. Z. Mohamed. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A three-valley Monte Carlo simulation approach was used to investigate electron transport in wurtzite GaN such as the drift velocity, the drift mobility, the average electron energy, energy relaxation time, and momentum relaxation time at high electric fields. The simulation accounted for polar optical phonon, acoustic phonon, piezoelectric, intervalley scattering, and Ridley charged impurity scattering model. For the steady-state transport, the drift velocity against electric field showed a negative differential resistance of a peak value of  m/s at a critical electric field strength  V/m. The electron drift velocity relaxes to the saturation value of  m/s at very high electric fields. The electron velocities against time over wide range of electric fields are reported.