Review Article

Thermal Transport across Solid Interfaces with Nanoscale Imperfections: Effects of Roughness, Disorder, Dislocations, and Bonding on Thermal Boundary Conductance

Figure 4

TDTR data on a 115 nm Al film evaporated on a Si substrate along with the best fit thermal model. Prior to Al evaporation, the Si was processed with an acid etch to remove the majority of the silicon native oxide layer. The thermophysical properties determined from the model best fit are  MW m−2 K−1 for the thermal boundary conductance across the Al/Si interface and  W m−2 K−1 for the thermal conductivity of the Si substrate.
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