Table of Contents
ISRN Renewable Energy
Volume 2013 (2013), Article ID 851876, 8 pages
Research Article

Carbon Based PV: n-Si(100)/DLC Structure for Photovoltaic Application

1Department of Instrumentation Science, USIC Building, Jadavpur University, Calcutta 700 032, India
2UGC-DAE CSR, Kalpakkam Node, Kokilamedu 603104, India

Received 25 June 2013; Accepted 5 August 2013

Academic Editors: E. Kymakis and P. D. Lund

Copyright © 2013 D. Ghosh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Diamond-like carbon films were electrodeposited on n-Si substrate to realize an n-Si/DLC PV structure. The films thus obtained were characterized by FESEM, XPS, FTIR, and Raman studies. Solar cell characteristics were also investigated critically. Maximum efficiency of 3.7% was obtained for the best n-Si(100)/DLC structure. Carrier life time was obtained from decay measurement. It was observed that photoinduced charge separation in n-Si(100)/DLC structure was associated with an increase in the dielectric constant and a decrease in the device resistance. The process, being reproducible, cheap, and scalable, involving significantly less process steps, is likely to usher a new hope to the current competitive scenario of PV technology.