International Scholarly Research Notices / 2013 / Article / Tab 1

Research Article

Controlled Geometry Formation of the Carbon Coils by the Substrate Pretreatment

Table 1

Experimental conditions for the deposition of the carbon coils on Si or SiO2 substrate with the different pretreatment methods.

SampleSubstratePretreatment
method
C2H2 flow rate (sccm)H2 flow  
rate (sccm)
SF6 flow rate (sccm)Total pressure (torr)Total deposition times (min)Source gases flow time (min)Substrate temp. (°C)
C2H2H2SF6

ASiO2Method-A15353510010, 6010, 6010, 605750
BSiO2Method-B15353510010, 6010, 6010, 605750
CSiO2Method-C15353510010, 6010, 6010, 605750
DSiO2None15353510010, 6010, 6010, 605750
ENi-SiO2Method-D15353510010, 6010, 6010, 605750
FSiMethod-A15353510010, 6010, 6010, 605750
GSiMethod-B15353510010, 6010, 6010, 605750
HSiMethod-C15353510010, 6010, 6010, 605750
ISiNone15353510010, 6010, 6010, 605750
JNi-SiMethod-D15353510010, 6010, 6010, 605750

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