Controlled Geometry Formation of the Carbon Coils by the Substrate Pretreatment

Table 1

Experimental conditions for the deposition of the carbon coils on Si or SiO₂ substrate with the different pretreatment methods.

Sample	Substrate	Pretreatment; method	C2H2 flow rate (sccm)	H2 flow; rate (sccm)	SF6 flow rate (sccm)	Total pressure (torr)	Total deposition times (min)	Source gases flow time (min)			Substrate temp. (°C)
								C2H2	H2	SF6
A	SiO2	Method-A	15	35	35	100	10, 60	10, 60	10, 60	5	750
B	SiO2	Method-B	15	35	35	100	10, 60	10, 60	10, 60	5	750
C	SiO2	Method-C	15	35	35	100	10, 60	10, 60	10, 60	5	750
D	SiO2	None	15	35	35	100	10, 60	10, 60	10, 60	5	750
E	Ni-SiO2	Method-D	15	35	35	100	10, 60	10, 60	10, 60	5	750
F	Si	Method-A	15	35	35	100	10, 60	10, 60	10, 60	5	750
G	Si	Method-B	15	35	35	100	10, 60	10, 60	10, 60	5	750
H	Si	Method-C	15	35	35	100	10, 60	10, 60	10, 60	5	750
I	Si	None	15	35	35	100	10, 60	10, 60	10, 60	5	750
J	Ni-Si	Method-D	15	35	35	100	10, 60	10, 60	10, 60	5	750