Table of Contents
ISRN Electronics
Volume 2013, Article ID 914058, 7 pages
http://dx.doi.org/10.1155/2013/914058
Research Article

High-Frequency and Low-Power Output Stages Based on FGMOS Flipped Voltage Follower

Department of Electronics and Communication Engineering, Netaji Subhas Institute of Technology, Sector 3, Dwarka, New Delhi 110078, India

Received 29 November 2012; Accepted 25 December 2012

Academic Editors: C. W. Chiou and J.-Y. Sim

Copyright © 2013 Maneesha Gupta et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Two new high-performance output stages are proposed. These output stages are basically designed by using a flipped voltage follower (FVF). The proposed low-power and low-voltage output stages have utilized the advantages of the FGMOS technology. They are characterized by low-power dissipation, reduced power supply requirement, and larger bandwidth. By using FGMOS-based FVF in place of conventional FVF, the linearity of the output stages has been highly improved. The small-signal analysis of FGMOS-based FVF is done to show the bandwidth enhancement of conventional FVF. The circuits are simulated to demonstrate the effectiveness using SPICE, in TSMC 0.25-micron CMOS device models. The simulation results show that the power supply requirement of the proposed output stages is highly reduced and bandwidths are extremely higher than the conventional circuits.