Table of Contents
International Scholarly Research Notices
Volume 2014, Article ID 145759, 6 pages
http://dx.doi.org/10.1155/2014/145759
Research Article

Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout

Division of Electrical Engineering, School of Electrical Engineering & Computer Science, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea

Received 27 March 2014; Accepted 29 October 2014; Published 18 November 2014

Academic Editor: Giuseppe Biondi-Zoccai

Copyright © 2014 Min Su Lee and Hee Chul Lee. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Min Su Lee and Hee Chul Lee, “Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout,” International Scholarly Research Notices, vol. 2014, Article ID 145759, 6 pages, 2014. https://doi.org/10.1155/2014/145759.