Table of Contents
International Scholarly Research Notices
Volume 2014, Article ID 145759, 6 pages
http://dx.doi.org/10.1155/2014/145759
Research Article

Aspect Ratio Model for Radiation-Tolerant Dummy Gate-Assisted n-MOSFET Layout

Division of Electrical Engineering, School of Electrical Engineering & Computer Science, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea

Received 27 March 2014; Accepted 29 October 2014; Published 18 November 2014

Academic Editor: Giuseppe Biondi-Zoccai

Copyright © 2014 Min Su Lee and Hee Chul Lee. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. M. S. Lee and H. C. Lee, “Dummy gate-assisted n-MOSFET layout for a radiation-tolerant integrated circuit,” IEEE Transactions on Nuclear Science, vol. 60, no. 4, pp. 3084–3091, 2013. View at Publisher · View at Google Scholar · View at Scopus
  2. R. Giacomini and J. A. Martino, “Modeling silicon on insulator MOS transistors with nonrectangular-gate layouts,” Journal of the Electrochemical Society, vol. 153, no. 3, pp. G218–G222, 2006. View at Publisher · View at Google Scholar · View at Scopus
  3. S. Karmalkar, P. V. Mohan, H. P. Nair, and R. Yeluri, “Compact models of spreading resistances for electrical/thermal design of devices and ICs,” IEEE Transactions on Electron Devices, vol. 54, no. 7, pp. 1734–1743, 2007. View at Publisher · View at Google Scholar · View at Scopus
  4. Y. S. Muzychka, J. R. Culham, and M. M. Yovanovich, “Thermal spreading resistance of eccentric heat sources on rectangular flux channels,” Journal of Electronic Packaging, vol. 125, no. 2, pp. 178–185, 2003. View at Publisher · View at Google Scholar · View at Scopus