Table of Contents
ISRN Electronics
Volume 2014, Article ID 391240, 11 pages
Research Article

Study of Linearity and Power Consumption Requirements of CMOS Low Noise Amplifiers in Context of LTE Systems and Beyond

CTVR-The Telecommunication Research Centre, Callan Institute, National University of Ireland Maynooth, Maynooth, Country Kildare, Ireland

Received 5 December 2013; Accepted 22 January 2014; Published 4 March 2014

Academic Editors: Y.-S. Hwang and G. Snider

Copyright © 2014 Grzegorz Szczepkowski and Ronan Farrell. This is an open access distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper presents a study of linearity in wideband CMOS low noise amplifiers (LNA) and its relationship to power consumption in context of Long Term Evolution (LTE) systems and its future developments. Using proposed figure of merit (FoM) to compare 35 state-of-the-art LNA circuits published over the last decade, the paper explores a dependence between amplifier performance (i.e., combined linearity, noise figure, and gain) and power consumption. In order to satisfy stringent linearity specifications for LTE standard (and its likely successors), the paper predicts that LNA FoM increase in the range of +0.2 dB/mW is expected and will inevitably translate into a significant increase in power consumption—a critical budget planning aspect for handheld devices, active antenna arrays, and base stations operating in small cells.