Stress and Grain Boundary Properties of GaN Films Prepared by Pulsed Laser Deposition Technique

Table 1

Different quantities related to GaN films obtained from this study.

Sample number and substrate temperature (𝑇𝑠)	𝐸𝑔 (eV)	Grain size from SEM (nm)	Λ𝑑; (nm)	𝑄𝑡; (10^15 m^−2)	𝐸𝑏; (meV)	Stress; (GPa)
GaN-1; 473 K	2.90	8	38.3	7	37.2	0.37
GaN-2; 573 K	3.11	12	35.5	6.6	33.2	0.31
GaN-3; 673 K	3.21	14	33.2	6.0	26.2	0.25
GaN-4; 773 K	3.24	35	30.4	5.2	18.1	0.17
GaN-5; 873 K	3.27	70	28.9	3.1	12.4	0.11