Table of Contents
ISRN Optics
Volume 2014, Article ID 684317, 7 pages
Research Article

Characterization of Silver Oxide Films Formed by Reactive RF Sputtering at Different Substrate Temperatures

1Department of Physics, Sri Venkateswara University, Tirupati-517 502, India
2Department CP2S, Institut Jean Lamour (UMR CNRS 7198), University of Lorraine, 54011 Nancy Cedex, France

Received 8 December 2013; Accepted 11 February 2014; Published 18 March 2014

Academic Editors: A. Baryshev and Y. S. Kivshar

Copyright © 2014 P. Narayana Reddy et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Silver oxide (A2O) films were deposited on glass and silicon substrates held at temperatures in the range 303–473 K by reactive RF magnetron sputtering of silver target. The films formed at room temperature were single phase Ag2O with polycrystalline in nature, while those deposited at 373 K were improved in the crystallinity. The films deposited at 423 K were mixed phase of Ag2O and Ag. Atomic force micrographs of the films formed at room temperature were of spherical shape grains with size of 85 nm, whereas those deposited at 473 K were with enhanced grain size of 215 nm with pyramidal shape. Electrical resistivity of the single phase films formed at room temperature was 5.2 × 10−3 Ωcm and that of mixed phase was 4.2 × 10−4 Ωcm. Optical band gap of single phase films increased from 2.05 to 2.13 eV with the increase of substrate temperature from 303 to 373 K, while in mixed phase films it was 1.92 eV.