Table of Contents
ISRN Nanomaterials
Volume 2014, Article ID 980206, 6 pages
Research Article

Effect of Growth Temperature on Structural Quality of In-Rich Alloys on Si (111) Substrate by RF-MOMBE

1Instrument Technology Research Center, National Applied Research Laboratories, 20 R&D Road VI, Hsinchu Science Park, Hsinchu 30076, Taiwan
2Department of Materials Science and Engineering, National Chiao Tung University, 10010, Tahsueh Road, Hsinchu 30010, Taiwan

Received 16 December 2013; Accepted 9 January 2014; Published 23 February 2014

Academic Editors: M. R. Ferreira and B. Panchapakesan

Copyright © 2014 Wei-Chun Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In-rich InAlN films were grown directly on Si (111) substrate by RF-MOMBE without any buffer layer. InAlN films were grown at various substrate temperatures in the range of 460–540°C with TMIn/TMAl ~3.3. Structural properties of InAlN ternary alloys were investigated with X-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM). It is shown that the deposited In0.8AlM0.2N (0001) films can be in epitaxy with Si (111) substrate with orientation relationship of //. Also, the growth rate around ~0.25 μm/h almost remains constant for growth in the temperature range from 460 to 520°C. Cross-sectional TEM from InAlN grown on Si (111) at 460°C shows that the epitaxial film is in direct contact with Si without any interlayer.