Table of Contents
Journal of Atomic, Molecular, and Optical Physics
Volume 2011, Article ID 879146, 4 pages
Research Article

Laser-Induced Defects in a Bulk GaAs Used as an Output Coupler in an Nd : YAG Laser Cavity

Laser Physics Laboratory, Scientific and Production Association “Academpribor,” 100125 Tashkent, Uzbekistan

Received 29 October 2010; Revised 23 January 2011; Accepted 22 February 2011

Academic Editor: Gregory Lapicki

Copyright © 2011 Sh. Payziyev et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


By using bulk GaAs as an output coupler as well as a saturable absorber, with changing of concentration of defects inside the laser cavity, Q-switching of flashlamp-pumped Nd : YAG laser has been studied. It is shown that the formation of the laser pulses, in a wide range of duration, which were reported in a lot of previous papers is caused by the intracavity changes of the defect concentration in GaAs. The factor of increase in defect concentration is estimated by modeling of the pulse formation process.