Table of Contents
Journal of Atomic and Molecular Physics
Volume 2014, Article ID 752934, 5 pages
Research Article

KLL Dielectronic Recombination of Highly Charged Sulfur and Silicon Ions

Department of Physics, University of Gujrat, Hafiz Hayat Campus, Gujrat 50 700, Pakistan

Received 22 December 2013; Accepted 13 February 2014; Published 21 May 2014

Academic Editor: George C. King

Copyright © 2014 Safdar Ali. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Dielectronic recombination measurements for highly charged ions were performed at the Stockholm refrigerated electron beam ion trap. We have obtained KLL DR resonance strengths for highly charged H- and He-like sulfur and silicon ions. The experimental results are compared with the theoretical data obtained from GRASP II code. Both the experimental and calculated results agree well within the experimental error bars. Moreover, the dielectronic recombination resonance strengths are used to obtain the new scaling parameters by incorporating our results with the previous measurements and to check the behaviour of scaling formula for H- and He-like isoelectronic sequences.