Research Article
The Effect of Isostatic Pressing on the Dielectric Properties of Screen Printed Ba0.5Sr0.5TiO3 Thick Films
Table 2
Comparison of dielectric properties for BST materials prepared by different methods.
| BST systems | Sintering temperature | Dielectric constant | Dielectric loss | Tunability | References |
| Thick film (screen printed, isostatic pressed, B-Li sintering aid, 19.5 m) | 950°C | 238 | 0.0028 | 61.7% (200 kV cm−1) | Current work | Thick film (screen printed, 20 m) | 1200–1300°C | 200 | 0.0027 | 9% (20 kV cm−1) |
Su et al. [22] | Thick film (nanosized, screen printed) | 1250°C | 180 | 0.02 | — |
Ditum and Button [23] | Thick film (screen printed, PbO sintering aid) | 850°C | — | — | 10% (20 kV cm−1) |
Zhang et al. [24] | Bulk material (solid state reaction) | 1350°C | 2500 | 0.0008 | 22.7% (30 kV cm−1) |
Wang et al. [25] | Porous bulk material (solid state reaction) | 1350°C | 990 | 0.002 | 19.6% (26 kV cm−1) |
Zhang et al. [20] | Thin film (sol-gel, (100) oriented) | 1100°C | 2714 | 0.0215 | 51.9% (25.3 kV cm−1) |
Jain et al. [26] |
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