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E-Journal of Chemistry
Volume 2 (2005), Issue 3, Pages 171-177

The Effect of Deposition Rate on Electrical, Optical and Structural Properties of ITO Thin Films

P. S. Raghupathi, Joseph George, and C. S. Menon

School of Pure and Applied Physics, Mahatma Gandhi University, Kottayam - 686560, Kerala, India

Received 22 April 2005; Accepted 31 May 2005

Copyright © 2005 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Indium tin oxide (ITO) thin films have been prepared using the reactive evaporation technique on glass substrates in an oxygen atmosphere. It is found that the deposition rate plays prominent role in controlling the electrical and optical properties of the ITO thin films. Resistivity, electrical conductivity, activation energy, optical transmission and band gap energy were investigated. A transmittance value of more than 90% in the visible region of the spectrum and an electrical conductivity of 3x10–6 Ωm has been obtained with a deposition rate of 2 nm/min. XRD studies showed that the films are polycrystalline.