Abstract
The Kinetics of anodic oxidation of zircaloy-2 have been studied at current densities ranging from 4 to 12 mA cm-2 at room temperature in order to investigate the dependence of ionic current density on the field across the oxide film. Thickness of the anodic films was estimated from capacitance data. The formation rate, current efficiency and differential field were found to increase with increase in the ionic current density for zircaloy-2. Plots of logarithm of formation rate vs. logarithm of current density is fairly linear. From linear plots of logarithm of ionic current density vs. differential field and applying the Cabrera - Mott theory, the half - jump distance (a) and height of energy barrier (W) were deduced.