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Journal of Chemistry
Volume 2015, Article ID 710140, 7 pages
Research Article

La Doping of CdS for Enhanced CdS/CdSe Quantum Dot Cosensitized Solar Cells

Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, and School of Instrumentation Science and Optoelectronics Engineering, Beijing Information Science and Technology University, Jianxiangqiao Campus, Beijing 100101, China

Received 4 June 2014; Revised 6 September 2014; Accepted 8 September 2014

Academic Editor: Steen Skaarup

Copyright © 2015 Xiaolei Qi et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


CdS/CdSe system of quantum dot cosensitized solar cells (QDCSCs) is one of the most attractive structures for high-efficiency due to its effect of level adjusting. However, the stepwise structure formed between levels of CdS and CdSe has a limitation for enhancing the efficiencies. Metal ions doping in quantum dots have emerged as a common way for changing the Fermi level, band gap, and conductance. Here we report an innovative concept for the rare earth materials La-doped of the CdS layer in the CdS/CdSe QDCSCs by means of the successive ionic layer adsorption and reaction (SILAR). Then we tested that La doped quantum dots can help more electrons accumulate in CdS film, which makes the Fermi level shift up and form a stepped structure. This method leads to enhanced absorption intensity, obviously increasing current density in CdS/CdSe QDCSCs. Our research is a new exploration for improving efficiencies of quantum dot sensitized solar cells.