Table of Contents
Journal of Coatings
Volume 2013 (2013), Article ID 109176, 9 pages
Research Article

Photoconductive Properties of Brush Plated Copper Indium Gallium Selenide Films

1Department of Electronics and Communication Systems, A.J.K.College of Arts and Science, Coimbatore 641105, India
2Department of Electronics, Ramakrishna Mission Vidyalaya College of Arts and Science, Perianaickenpalayam, Coimbatore 641020, India
3ECMS Division, CSIR-CECRI, Karaikudi 6, India

Received 26 May 2013; Accepted 6 September 2013

Academic Editor: Mariana Braic

Copyright © 2013 N. P. Subiramaniyam et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Copper indium gallium selenide (CIGS) films were deposited for the first time by the brush electrodeposition technique. X-ray diffraction studies indicated the formation of single phase chalcopyrite CIGS. Lattice parameters, dislocation density, and strain were calculated. Band gap of the films increased from 1.12 eV to 1.63 eV as the gallium concentration increased. Room temperature transport parameters of the films, namely, resistivity increased from 0.10 ohm cm to 12 ohm cm, mobility decreased from 125 cm2V−1s−1 to 20.9 cm2V−1s−1, and carrier concentration decreased from 4.99 × 1017 cm−3 to 2.49 × 1016 cm−3 as the gallium concentration increased. Photosensitivity of the films increased linearly with intensity of illumination and with increase of applied voltage.