Research Article

Hybrid Dynamic MCML Style: A High Speed Dynamic MCML Style

Table 4

Performance comparison of the existing DyCML and the proposed H-DyCML 3-input XOR gate with two levels of source-coupled transistors in the PDN.

ParameterStyle
DyCMLH-DyCML (Technique 1) H-DyCML (Technique 2)H-DyCML (Technique 3)
PMOSNMOS

Technology node 180 nm

Delay (ps)326.39211.02180.00191.31199.05
Power (µW)26.5414.8414.8413.2312.32
PDP (fJ)8.667.355.565.696.37

Technology node 90 nm

Delay (ps)226175163169190
Power (µW)2316.216.818.416.7
PDP (fJ)5.22.832.733.13.17