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Journal of Electrical and Computer Engineering
Volume 2013, Article ID 189436, 10 pages
http://dx.doi.org/10.1155/2013/189436
Research Article

Novel Complete Probabilistic Models of Random Variation in High Frequency Performance of Nanoscale MOSFET

Department of Computer Engineering, Siam University, 38 Petchkasem Road, Bangkok 10160, Thailand

Received 27 September 2012; Revised 30 January 2013; Accepted 31 January 2013

Academic Editor: Jan Van der Spiegel

Copyright © 2013 Rawid Banchuin. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [3 citations]

The following is the list of published articles that have cited the current article.

  • Rawid Banchuin, and Roungsan Chaisricharoen, “Analytical analysis and modelling of variation in gate capacitance of subthreshold MOSFET,” JICTEE 2014 - 4th Joint International Conference on Information and Communication Technology, Electronic and Electrical Engineering, 2014. View at Publisher · View at Google Scholar
  • Rawid Banchuin, “Analysis and comprehensive analytical modeling of statistical variations in subthreshold MOSFET's high frequency characteristics,” Advances in Electrical and Electronic Engineering, vol. 12, no. 1, pp. 47–57, 2014. View at Publisher · View at Google Scholar
  • Rawid Banchuin, “Comprehensive Analytical Models of Random Variations in Subthreshold MOSFET’s High-Frequency Performances,” Complementary Metal Oxide Semiconductor, 2018. View at Publisher · View at Google Scholar