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Journal of Electrical and Computer Engineering
Volume 2015, Article ID 630178, 14 pages
http://dx.doi.org/10.1155/2015/630178
Research Article

Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors

School of Microelectronics, Xidian University, Xi’an 710071, China

Received 6 May 2015; Revised 5 August 2015; Accepted 12 August 2015

Academic Editor: Muhammad Taher Abuelma’atti

Copyright © 2015 Zhi Jiang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We demonstrate the impact of semiconductor/oxide interface traps (ITs) on the DC and AC characteristics of tunnel field-effect transistors (TFETs). Using the Sentaurus simulation tools, we show the impacts of trap density distribution and trap type on the n-type double gate- (DG-) TFET. The results show that the donor-type and acceptor-type ITs have the great influence on DC characteristic at midgap. Donor-like and acceptor-like ITs have different mechanism of the turn-on characteristics. The flat band shift changes obviously and differently in the AC analysis, which results in contrast of peak shift of Miller capacitor for n-type TFETs with donor-like and acceptor-like ITs.