Research Article

Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors

Figure 12

(a) The calculated mini SS, (b) delay time, (c) dynamic power, and (d) static power versus ITs density at valence band. Delay time τ is given by . The acceptor-type ITs can reduce the dynamic power and the mini SS is more immune to acceptor-type ITs.
(a)
(b)
(c)
(d)