Research Article
Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors
Figure 12
(a) The calculated mini SS, (b) delay time, (c) dynamic power, and (d) static power versus ITs density at valence band. Delay time τ is given by . The acceptor-type ITs can reduce the dynamic power and the mini SS is more immune to acceptor-type ITs.
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