Impact of Interface Traps on Direct and Alternating Current in Tunneling Field-Effect Transistors

Figure 16

Miller capacitance of DG-TFET for donor-type ITs is studied at with variable ITs density . (a) The trap is distributed at the energy level 0.6 eV above the midgap, (b) at the energy level 0.4 eV above the midgap, (c) at the midgap, (d) at the energy level 0.4 eV under the midgap, and (e) at the energy level 0.6 eV under the midgap.

(a)

(b)

(c)

(d)

(e)