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Journal of Electrical and Computer Engineering
Volume 2015, Article ID 905718, 11 pages
http://dx.doi.org/10.1155/2015/905718
Research Article

Drive Current Enhancement in TFET by Dual Source Region

School of Microelectronics, Xidian University, Xi’an 710071, China

Received 9 January 2015; Revised 15 April 2015; Accepted 3 May 2015

Academic Editor: Muhammad Taher Abuelma’atti

Copyright © 2015 Zhi Jiang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This paper presents tunneling field-effect transistor (TFET) with dual source regions. It explores the physics of drive current enhancement. The novel approach of dual source provides an effective technique for enhancing the drive current. It is found that this structure can offer four tunneling junctions by increasing a source region. Meanwhile, the dual source structure does not influence the excellent features of threshold slope (SS) of TFET. The number of the electrons and holes would be doubled by going through the tunneling junctions on the original basis. The overlap length of gate-source is also studied. The dependence of gate-drain capacitance and gate-source capacitance on gate-to-source voltage and drain-to-source voltage was further investigated. There are simulation setups and methodology used for the dual source TFET (DS-TFET) assessment, including delay time, total energy per operation, and energy-delay product. It is confirmed that the proposed TFET has strong potentials for VLSI.