Table of Contents
Journal of Metallurgy
Volume 2011, Article ID 436704, 5 pages
Research Article

Theoretical Study of a Thermophysical Property of Molten Semiconductors

Department of Chemistry, Faculty of Science and Technology Hebron University, P.O. Box 40, Hebron, West Bank, Palestine

Received 11 December 2010; Accepted 23 February 2011

Academic Editor: Ludo Froyen

Copyright © 2011 Fathi Aqra and Ahmed Ayyad. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This paper deals with theoretical approach to surface tension of molten silicon and germanium, and contributes to this field, which is very important. A theoretical calculation for determining the surface tension of high-temperature semiconductor melts, such as molten silicon and germanium, in the temperature range 1687–1825 K and 1211–1400 K, respectively, is described. The calculated temperature-dependence surface tension data for both Si and Ge are expressed as 𝛾 = 8 7 6 0 . 3 2 ( 𝑇 𝑇 𝑚 ) and 𝛾 = 5 7 1 0 . 0 7 4 ( 𝑇 𝑇 𝑚 ) (mJ m−2), respectively. These values are in consistence with the reported experimental data (720–875 for Si and 560–632 mJ m−2 for Ge). The calculated surface tension for both elements decreases linearly with temperature.