Theoretical Study of a Thermophysical Property of Molten Semiconductors

Table 1

Parameters needed for calculations of the surface tension of molten Si and Ge (𝑇_𝑚, density, and 𝐸_𝑠 values were taken from [23], while 𝑉_𝑠, 𝑓, and 𝜑 were determined as given in the text).

Parameter	Si	Ge
𝑇𝑚 (K)	1687	1211
Density at m.p. (g/cm^3)	2.57	5.60
𝐸𝑠 (kJ/mol)	456	377
𝑉𝑠 (cm^3/mol)	10.92	12.96
𝑓	0.297	0.297
𝜑(×10^−16)	7.53	8.44