Journal of Metallurgy / 2012 / Article / Fig 5

Research Article

Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN

Figure 5

(a) The barrier height and ideality factors of the Ir Schottky contact as a function of annealing. (b) The barrier height and ideality factors of the Ir/Au Schottky contact as a function of annealing.
531915.fig.005a
(a) Ir/n-InGaN Schottky diode.
531915.fig.005b
(b) Au/Ir/n-InGaN Schottky diode.

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